Memory device transistors

ABSTRACT

Method and device embodiments are described for fabricating MOSFET transistors in a semiconductor also containing non-volatile floating gate transistors. MOSFET transistor gate dielectric smiling, or bird&#39;s beaks, are adjustable by re-oxidation processing. An additional re-oxidation process is performed by opening a poly-silicon layer prior to forming an inter-poly oxide dielectric provided for the floating gate transistors.

FIELD OF THE INVENTION

The present invention relates to semiconductor memory devices and, moreparticularly, to transistor fabrication in a memory device.

BACKGROUND

Flash memory is non-volatile, which means that it stores information ona semiconductor in a way that does not need power to maintain theinformation in the chip. Flash memory is based on the Floating-GateAvalanche-Injection Metal Oxide Semiconductor (FAMOS transistor) whichis essentially a Complimentary Metal Oxide Semiconductor (CMOS) FieldEffect Transistor (FET) with an additional conductor suspended betweenthe gate and source/drain terminals. Current flash memory devices aremade in two forms: NOR flash and NAND flash. The names refer to the typeof logic used in the storage cell array. Further, flash memory storesinformation in an array of transistors, called “cells,” each of whichtraditionally stores one or more bits of information.

A flash cell is similar to a standard MOSFET transistor, except that ithas two gates instead of just one. One gate is the control gate (CG)like in other MOS transistors, but the second is a floating gate (FG)that is insulated all around by an oxide layer. The FG is between the CGand the substrate. Because the FG is isolated by its insulating oxidelayer, any electrons placed on it get trapped there and thus store theinformation.

When electrons are trapped on the FG, they modify (partially cancel out)an electric field coming from the CG, which modifies the thresholdvoltage (Vt) of the cell. Thus, when the cell is “read” by placing aspecific voltage on the CG, electrical current will either flow or notflow between the cells source and drain connections, depending on the Vtof the cell. This presence or absence of current is sensed andtranslated into 1's and 0's, reproducing the stored data.

Fabricating floating gate transistors and standard MOSFET transistor ona common integrated circuit require slightly different process steps.This is because standard MOSFET transistors do not have a floating gate.To reduce costly process variations the MOSFET transistors arefabricated with a floating gate structure, but modified to makeelectrical contact to the floating gate.

For reasons stated below which will become apparent to those skilled inthe art upon reading and understanding the present specification, thereis a need for methods and devices to fabricate transistors in a memorydevice.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a simplified block diagram of an integrated circuit dynamicmemory device in accordance with an embodiment of the invention;

FIG. 2 is a partial schematic diagram of a prior art NOR flash array;

FIG. 3 is a partial schematic diagram of a prior art NAND flash array;

FIGS. 4A-4D are cross-section views of a prior art in-process floatinggate transistor;

FIGS. 5A-5D are additional cross-section views of a prior art in-processfloating gate transistor;

FIG. 6 is a block diagram of an integrated circuit device of anembodiment of the present invention;

FIGS. 7A-7C are cross-section views of a prior art in-process MOSFETtransistor in a non-volatile memory;

FIGS. 8A-8G are cross-section views of in-process MOSFET transistors ofembodiments of the present invention;

FIG. 9 is a plan view of the in-process MOSFET transistor of FIG. 8B;and

FIG. 10 is a plan view of the in-process MOSFET transistor of FIG. 8G.

DESCRIPTION

In the following detailed description of the invention, reference ismade to the accompanying drawings which form a part hereof, and in whichis shown, by way of illustration, different embodiments in which theinvention may be practiced. These embodiments are described insufficient detail to enable those skilled in the art to practice theinvention. Other embodiments may be utilized and structural, logical,and electrical changes may be made without departing from the scope ofthe present invention.

The terms wafer and substrate used in the following description includeany structure having an exposed surface onto which a layer is depositedaccording to the present invention, for example to form the integratedcircuit (IC) structure. The term substrate is understood to includesemiconductor wafers. The term substrate is also used to refer tosemiconductor structures during processing, and may include other layersthat have been fabricated thereupon. Both wafer and substrate includedoped and undoped semiconductors, epitaxial semiconductor layerssupported by a base semiconductor or insulator, as well as othersemiconductor structures. The term conductor is understood to includesemiconductors, and the term insulator is defined to include anymaterial that is less electrically conductive than the materialsreferred to as conductors.

Relative terms such as above, below, lateral and adjacent are notlimited to an specific coordinate system. These terms are used todescribe relative positions between components and are not intended tobe limitations. As such, additional components can be positioned betweencomponents that are above, below, lateral and adjacent to each other.Further, the figures are provided to help facilitate an understanding ofthe detailed description and are not intended to be accurate in scaleand have been simplified.

Embodiments of the present invention can include a semiconductor memorydevice having an array of memory cells. The memory cells arenon-volatile charge trapping cells for example floating gatetransistors. In addition, the memory cells can store one or more databits per cell.

FIG. 1 is a simplified block diagram of an integrated circuit memorydevice 100 in accordance with an embodiment of the invention. The memorydevice 100 includes an array of non-volatile floating gate memory cells102, a address circuitry 104, control circuitry 110, and Input/Output(I/O) circuitry 114. The memory cells are also referred to as Flashmemory cells because blocks of memory cells are erased concurrently, ina flash operation.

The memory device 100 can be coupled to a processor 120 or other memorycontroller for accessing the memory array 102. The memory device 100coupled to a processor 120 forms part of an electronic system. Someexamples of electronic systems include personal computers, peripheraldevices, wireless devices, digital cameras, personal digital assistants(PDA's) and audio recorders.

The memory device 100 receives control signals across control lines 122from the processor 120 to control access to the memory array 102 viacontrol circuitry 110. Access to the memory array 102 is directed to oneor more target memory cells in response to address signals receivedacross address lines 124. Once the array is accessed in response to thecontrol signals and the address signals, data is written to or read fromthe memory cells across data, DQ, lines 126.

It will be appreciated by those skilled in the art that additionalcircuitry and control signals can be provided, and that the memorydevice of FIG. 1 has been simplified to help focus on the invention. Itwill be understood that the above description of a memory device isintended to provide a general understanding of the memory and is not acomplete description of all the elements and features of a typicalmemory device.

Flash memory is nonvolatile memory that can be erased and reprogrammedin units of memory called blocks. A write operation in any flash devicecan only be performed on an empty/erased unit, so in most cases an eraseoperation must precede the write operation.

As shown in FIG. 2 a simplified portion of a NOR flash memory array isdescribed. The memory array includes floating gate memory cells 200coupled to source line 210, word lines 212 and bit line 214. The cellsare arranged in a NOR configuration.

A NOR flash cell is programmed (set to a specified data value) byconducting electrons from the source to the drain, with a large voltageplaced on the CG a strong electric field to drives electrons onto theFG, a process called hot-electron injection. To erase (reset to all 1's,in preparation for reprogramming) a NOR flash cell, a large voltagedifferential is placed between the CG and source, which pulls theelectrons off through Fowler-Nordheim tunneling, a quantum mechanicaltunneling process. Most NOR flash memory components are divided intoerase segments, usually called either blocks or sectors. All of thememory cells in a block are erased at the same time. NOR programming,however, can generally be performed one byte or word at a time.

In a read operation, a word line is activated to access a memory cell.Based upon a charge status of the floating gate, the memory cell may beactivated. That is, if the floating gate is not charged the cell has alower threshold voltage and can be activated by a control gate voltageon the word line. When activated the source line is coupled through thecell to the bit line. As such, the bit line voltage or current is usedto read the memory cell. To program or erase a cell, the source line,bit line and word line voltages are controlled to either add or removecharge to the floating gate cell, as explained above.

FIG. 3 illustrates a simplified portion of a NAND flash memory array.NAND Flash uses tunnel injection for writing and tunnel release forerasing. The NAND memory also includes floating gate memory cells 220coupled to source line 224, word lines 226 and a bit line 230. Unlikethe NOR memory arrangement, the NAND memory cells are coupled in a NANDconfiguration. That is the cells are coupled in series between the bitline and source line. One or more bit line select transistors 240 areused to selectively isolate the cells from the bit and source lines.

In a read operation, a word line of a target (selected) memory cell ismaintained at a low voltage level. All unselected cell word lines arecoupled to a voltage sufficiently high to activate the unselected cellsregardless of their floating gate charge. If the selected cell has anuncharged floating gate it is activated. The bit line and source lineare then coupled through the series of memory cells. If the selectedcell has a charged floating gate it will not activate. The bit line andsource lines, therefore, are not coupled through the series of memorycells.

The transistor cell for NAND or NOR memory cell are substantially thesame. That is, each transistor has a control gate, a floating gate, asource region and a drain region. FIGS. 4A, 4B and 4C illustrates asimplified cross-section views of a typical floating gate memory cellwhich can be used in either NAND or NOR devices. Further, the presentinvention can be implemented in other integrated circuits havingembedded floating gate memory transistors therein.

Referring to FIG. 4A, the floating gate transistor 400 is fabricated ina semiconductor active area 402. A source region 404 and a drain region406 are formed, such as by implanting, in the active area. As known tothose in the art, a channel region 408 between the source and drainregions is controlled during operation.

A gate dielectric 410, such as an oxide, is located between the channelregion and a floating gate 412. The gate dielectric can also be referredto as a tunnel dielectric. The floating gate is typically fabricatedwith a poly-silicon material. Different fabrication processes can beused to make the floating gate. In one embodiment, the floating gate isfabricated from a single layer of poly-silicon. In another embodiment,the floating gate can be fabricated as multiple layers of poly-silicon,as illustrated below. The present invention, however, is not limited tofabrication using multiple layers of poly-silicon.

Above the floating gate is an inter-gate dielectric 414, also referredto an inter-poly dielectric. This dielectric can be multiple layers. Forexample a dielectric of oxide-nitride-oxide (ONO) layers, as shown inFIG. 4B, include a first oxide layer 440, a nitride layer 442 and asecond oxide layer 444.

A control gate 420 is located above the inter-gate dielectric. Thecontrol gate can also be fabricated using a poly-silicon material. Ametal layer 422 can be coupled to the control gate. This layer has ahigher conductivity than poly-silicon and can include a material such asa Tungsten Silicon film (WSi).

Spacers 424 are provided on the sidewalls of the gate stack 426. In thisembodiment the gate stack includes the floating gate 412, inter-gatedielectric 414 and the control gate 420.

FIG. 4C is a perpendicular cross-section view of the transistor of FIG.4A through the channel region 408. The active area 402 appears as apillar in this view with shallow trench isolation regions (STI) 460 and462 on opposite sides of the active area. The STI is lined with an oxidelayer 468 and filled with a dielectric material 470 such as chemicalvapor deposited (CVD) silicon dioxide (SiO₂). The oxide fills the STIregions to provide electrical and physical separation betweenneighboring active regions 402.

The floating gate is fabricated as two layers of poly-silicon 450 and452. Poly-silicon 452 laterally extends beyond poly-silicon 450. Duringfabrication the edges of the gate dielectric 410 near the STI regions ismodified by continued oxidation, or re-oxidation. That is, the STIoxidation process, forming the bottom layer 440 of the ONO inter-gatedielectric and the side wall spacer 424 oxidation process contribute tothe gate dielectric. The floating gate is formed in two poly-silicondeposition steps to allow for self-aligned etching of the STI regions.

FIG. 4D illustrates a ‘smile’ formed in the gate dielectric. The gatedielectric layer 410 thickness increases at end locations 490 near theSTI regions 460 and 462. It is noted that although the gate and STIdielectric regions may be formed separately the oxide material 410, 468and 470 can be illustrated as a common dielectric material. As explainedbelow, the size of the smile regions, also referred to as “bird'sbeaks”, has a direct relationship to the re-oxidation process of thegate dielectric.

FIGS. 5A and 5B illustrate prior art partial fabrication steps of thefloating gate transistor of FIG. 4A. Referring to FIG. 5A, a layer ofpoly-silicon has been deposited and patterned to form gate section 450on gate dielectric 410. While etching the poly-silicon to define thefloating gate 450 the self aligned trenches for the STI regions 460 and462 were also formed. An oxide has been formed in the STI regions. Theoxidation of the STI regions forms a bird's beak 530 in the gatedielectric as a result of re-oxidization.

After planarizing the STI oxide and poly-silicon 450 a poly-siliconlayer 500 has been deposited. This layer has been patterned and etchedto form region 452 of the floating gate. That is, openings 510 and 520,or slits, running parallel to the STI trenches have been etched throughthe poly-silicon layer 500. Poly-silicon 450 and 452 together form thefloating gate.

In FIG. 5B the formation of ONO layers 440, 442 and 444 is illustrated.While forming oxide layer 440 the gate dielectric 410 is furtherre-oxidized such that the bird's beak at 530 is increased in size.

FIGS. 5C and 5D illustrate partial fabrication steps of the in-processfloating gate transistor following FIG. 5B in a cross-section alongactive area 402. Referring to FIG. 5C, after the ONO dielectric isformed a poly-silicon layer is formed, patterned and then etched todefine poly-silicon 550 of the control gate. The etch operation isperformed to define the gate stack. That is, the inter gate dielectric414 and floating gate 450 and 452 are also etched. Spacers 424 are thenformed on the gate stack side as illustrated in FIG. 5D. The spacers areoxide and also re-oxidize the gate dielectric material.

A flash memory device includes both floating gate transistors and MOSFETtransistors. As illustrated in the simplified block diagram in FIG. 6,the semiconductor device 600 includes an array region 610 and peripheralregions 620 and 630. The array region contains floating gatetransistors, while the peripheral regions contain CMOS transistors. In aMOSFET transistor the gate dielectric smiling, or bird's beaks, helpaddress transistor gate to substrate breakdown problems. That is,controlling the amount of smile in the gate dielectric of a transistorcan be beneficial.

Because the array has floating gate transistors, in prior art memorydevices the periphery MOSFET transistors follow a similar processingtechnique. The MOSFET transistors, however, uses the floating gatepoly-silicon as a gate. Prior art techniques for forming the peripheraltransistors either remove some of the inter-gate dielectric layer(s) toelectrically short the control and floating gate poly-silicon layers, orprovide an electrical contact to the floating gate poly-silicon.

FIGS. 7A, 7B and 7C illustrate prior art partial fabrication steps of anin-process peripheral MOSFET transistor. In the cross-section of FIG.7A, the transistor follows some of the process steps of the floatinggate transistors. As such, common numbers are used. Poly-silicon 450,gate dielectric 410, trenches 460 and 462 and active area 402 are formedas described above. Poly-silicon layer 452, inter-gate dielectric 414,and poly-silicon layer 550 are also formed. Unlike the above describedfloating gate transistor processes, poly-silicon layer 452 is not etchedprior to forming the inter-gate dielectric layers. These three layersare etched in multiple steps to provide the gate structure 700 of FIG.7B.

Gate 700 includes a tab 710 extending from poly-silicon 452. Anelectrical contact 720 connects with poly-silicon 550. Alternatively,part of the inter-gate dielectric above poly-silicon 450 could beremoved in the periphery prior to forming poly-silicon 550, as shown inFIG. 7C. In both of the prior art techniques, the lower poly-silicon 450and 452 is electrically coupled to for use as a CMOS transistor gate. Itis noted that some bird's beak is formed in the gate dielectric as aresult of the STI oxide. The prior art techniques, however, do not etchthe poly-silicon layer 452 prior to forming the inter-gate dielectriclayer.

Example embodiments of methods and structures of the present inventionare described with reference to FIGS. 8A to 8G. FIG. 8A is a crosssection of an in-process peripheral MOSFET transistor duringfabrication. An active area 802 of the semiconductor is surrounded byisolation regions 806 and 808. As explained above, an oxide containinggate dielectric 814 is located above the active area to separatepoly-silicon gate 804. Similar to the floating gate transistorprocessing described above, the poly-silicon gate 804 has been patternedand etched to form self-aligned the trench isolation regions which havebeen filled with an oxide containing material.

Poly-silicon 810 is formed above poly-silicon gate 804 and the STIfilled regions in the same step as poly-silicon layer 500 of FIG. 5A.Poly-silicon layer 810 is patterned and etched to form gate 830 withadjacent openings 824 and 826. As shown in FIG. 8B, gate 830 has alateral edge 832 that is spaced 834 by a distance X from the edge ofgate 804. The distance of spacing 834 can be selected to adjust anamount of bird's beak under gate 804. Because the active area was etchedalong with the gate dielectric, lateral edge 832 is also spaced by adistance X from an edge of the active area at the gate oxide. Thedistance can be zero or greater.

Also shown in FIG. 8B, the shallow trench isolation can be formed bymasking and etching the gate dielectric 814 and active area prior toforming poly-silicon gate 804. Here, the isolation regions are formedprior to forming the poly-silicon layer 810. The gate is thereforeformed from one poly-silicon layer not multiple layers. The dotted lineis used to illustrate different embodiments for forming the poly-silicongate. The gate poly-silicon is then etched as described above withopenings 824 and 826. The opening(s) have a lateral edge that is spacedby a distance X from the lateral edge of gate dielectric 804.

In FIG. 8C a dielectric layer 840 is formed. The dielectric layer(s) isformed at the same time as inter-gate dielectric layer 414 of FIG. 4B.That is, the dielectric includes at least a lower oxide layer 440. Byproviding openings 824 and 826 through poly-silicon layer 810 the loweroxide layer 440 contributes to further re-oxidizing of gate dielectric814 at 820. As explained above, prior art methods of forming peripheraltransistors in a non-volatile memory did not perform an etch operationon poly-silicon layer 810 prior to forming the inter-gate dielectric.

In one embodiment illustrated in FIGS. 8D and 8E, after the dielectriclayer(s) 840 is formed a poly-silicon layer 850 is formed. This layer isformed at the same time with control gate layer 550 of FIG. 5C. As shownin FIG. 8E layer 850 and dielectric 840 are patterned and etched.Contact area 854 is formed to provide a region for electrical contact856 to couple to gate 804. Bird's beak 852 is formed and controlled byproviding the openings in layer 810 prior to forming dielectric 840.

An alternate embodiment is illustrated in FIGS. 8F and 8G, after thedielectric layer(s) 840 is formed an opening 860 in the dielectric layerabove gate 830 is etched. The opening exposes part of gate 830 so thatpoly-silicon layer 850 can contact gate 830. This layer is formed at thesame time with control gate layer 550 of FIG. 5C. As shown in FIG. 8Glayer 850 is patterned and etched. Electrical contact 862 can couple togate 830 through patterned layer 850. Bird's beaks 852 are formed andcontrolled by providing the openings in layer 810 prior to formingdielectric 840.

A plan view of FIG. 8B is provided in FIG. 9 and better illustrates thelateral overlap of gate 830 from lower gate portion 804. The amount ofoverlap (X) can be controlled to adjust the amount of bird's beak in thegate dielectric. That is, a smaller overlap will increase the bird'sbeak of the peripheral transistor when the inter-gate dielectric isformed. A plan view of FIG. 8G is provided in FIG. 10 and betterillustrates the contact regions 860 and 862.

The above described embodiments for fabricating FET transistors in asemiconductor also containing non-volatile floating gate transistorsallow additional control of transistor gate dielectric smiling, orbird's beaks. An additional re-oxidation process is performed by openingan upper poly-silicon layer prior to forming an inter-poly oxidedielectric.

1. A method of adjusting a break down voltage of a field effecttransistor (FET) comprising: forming source and drain regions in asemiconductor substrate active area, wherein the source and drain arelaterally separated by a channel region; fabricating a transistor gatevertically over the channel region and separated therefrom by a gateoxide, wherein the transistor gate has at least one lateral edge;forming an oxide over the transistor gate, the oxide contributes to are-oxidation of a portion of the gate oxide to adjust the break down ofthe FET; and forming a structure above and in electrical contact withthe transistor gate.
 2. The method of claim 1 further comprises removinga portion of the oxide over the transistor gate to expose a surface ofthe transistor gate.
 3. The method of claim 1 wherein the lateral edgeof the transistor gate is laterally spaced from an edge of the activearea at the gate oxide by a distance X, where distance X is selected toadjust a magnitude of the re-oxidation.
 4. A method of fabricating afield effect transistor (FET) comprising: forming a gate dielectriclayer comprising an oxide in contact with a substrate active area;etching the active area to form an active area lateral edge; forming afirst poly-silicon layer in contact with the gate dielectric layer, suchthat the first poly-silicon layer is separated from the etched activearea by the gate dielectric layer; etching the first poly-silicon layerto provide at least one opening therethrough, the at least one openingbeing spaced from an edge of the active area; forming a dielectric layercomprising oxide in contact with the etched first poly-silicon layersuch that the dielectric layer is formed in the at least one opening andcontributes to a re-oxidation of a portion of the gate dielectric; andproviding electrical contact to the etched first poly-silicon layer. 5.The method of claim 4 wherein the at least one opening is spaced fromthe edge of the active area by a distance selected to control an amountof re-oxidation.
 6. The method of claim 4 wherein the dielectric layercomprises layers of oxide-nitride-oxide (ONO).
 7. The method of claim 4further comprises forming a second poly-silicon layer adjacent to thedielectric layer such that the dielectric layer separates the secondpoly-silicon layer from the etched first poly-silicon layer.
 8. Themethod of claim 7 further comprises etching an opening through thedielectric layer prior to forming the second poly-silicon layer suchthat the second poly-silicon layer contacts the etched firstpoly-silicon layer.
 9. The method of claim 4 wherein providingelectrical contact to the etched first poly-silicon layer comprisesforming an electrical contact structure to the etched first poly-siliconlayer.
 10. A method of fabricating a field effect transistor (FET)comprising: forming a gate dielectric layer comprising an oxide incontact with a substrate active area; forming a first poly-silicon gatesection in contact with the gate dielectric layer, such that the firstpoly-silicon gate section is separated from the active area by the gatedielectric layer; forming a first poly-silicon layer in contact withfirst poly-silicon gate section; etching the first poly-silicon layer toprovide at least one opening therethrough, the at least one openingbeing spaced from an edge of the first poly-silicon gate section;forming a dielectric layer comprising oxide in contact with the etchedfirst poly-silicon layer such that the dielectric layer is formed in theat least one opening and contributes to a re-oxidation of a portion ofthe gate dielectric; and providing electrical contact to the first gatesection.
 11. The method of claim 10 wherein the at least one opening isspaced from the edge of the first gate section by a distance selected tocontrol an amount of re-oxidation.
 12. The method of claim 10 whereinthe dielectric layer comprises layers of oxide-nitride-oxide (ONO). 13.The method of claim 10 further comprises forming a second poly-siliconlayer adjacent to the dielectric layer such that the dielectric layerseparates the second poly-silicon layer from the etched firstpoly-silicon layer.
 14. The method of claim 13 further comprises etchingan opening through the dielectric layer prior to forming the secondpoly-silicon layer such that the second poly-silicon layer contacts theetched first poly-silicon layer.
 15. The method of claim 10 whereinproviding electrical contact to the first gate section comprises formingan electrical contact structure to the etched first poly-silicon layer.16. A method of fabricating a field effect transistor (FET) in anon-volatile memory device, the method comprising: implanting source anddrain regions in a semiconductor substrate active area, wherein thesource and drain are laterally separated by a channel region;fabricating a poly-silicon transistor gate vertically over the channelregion and separated therefrom by a gate oxide, wherein the transistorgate has at least one lateral edge; forming a floating gate inter-gatedielectric layer comprising an oxide over the poly-silicon transistorgate, the dielectric layer contributes to a re-oxidation of a portion ofthe gate oxide; and forming a poly-silicon gate structure above and inelectrical contact with the transistor gate, wherein the poly-silicongate structure is formed from poly-silicon layer used to form controlgates of floating gate memory cells in the non-volatile memory device.17. The method of claim 16 wherein the floating gate inter-gatedielectric layer comprises layers of oxide-nitride-oxide (ONO).
 18. Amethod of fabricating a field effect transistor (FET) and floating gatetransistor in a semiconductor memory device, the method comprising:forming first and second active substrate areas, wherein the first andsecond active areas are each separated by an isolation regions; forminga gate dielectric layer comprising an oxide material in contact with thefirst and second active areas; forming at least one poly-silicon layerover the gate dielectric layer; etching the at least one poly-siliconlayer to form floating gates vertically above both the first and secondactive areas; forming a dielectric layer comprising oxide in contactwith the floating gates, wherein the dielectric layer contributes to are-oxidation of a portion of the gate dielectric under the floatinggates; forming a second poly-silicon layer over the dielectric layer;etching the second poly-silicon layer to form control gates verticallyover the floating gates; for the FET, providing electrical contact toone of the floating gates; and for the floating gate transistor,providing electrical contact to one of the control gates.
 19. The methodof claim 18 wherein the dielectric layer comprises layers ofoxide-nitride-oxide (ONO).
 20. The method of claim 18 wherein the firstand second active substrate areas are formed by etching a substrate, andthe gate dielectric and at least one poly-silicon layer are formed priorto etching the substrate.
 21. The method of claim 18 wherein there-oxidation of the portion of the gate dielectric under the floatinggates is located near an edge of the first and second active areas. 22.A method of fabricating a field effect transistor (FET) and floatinggate transistor in a semiconductor memory device, the method comprising:forming first and second active substrate areas, wherein the first andsecond active areas are each separated by an isolation regions; forminga gate dielectric layer comprising an oxide material on the first andsecond active areas; forming a first poly-silicon layer over the gatedielectric layer; etching the first poly-silicon layer to form firstgate sections vertically above both the first and second active areas;forming a second poly-silicon layer over the first gate sections;etching the second poly-silicon layer to form second gate sections incontact with each of the first gate sections, wherein the first andsecond gate sections form floating gates; forming a dielectric layercomprising oxide in contact with the second gate sections, wherein thedielectric layer contributes to a re-oxidation of a portion of the gatedielectric under the floating gates; forming a third poly-silicon layerover the dielectric layer; etching the third poly-silicon layer to formcontrol gates vertically over the floating gates; for the FET, providingelectrical contact to one of the floating gates; and for the floatinggate transistor, providing electrical contact to one of the controlgates.
 23. The method of claim 22 wherein the dielectric layer compriseslayers of oxide-nitride-oxide (ONO).
 24. A method of fabricating a fieldeffect transistor (FET) in a periphery area and floating gate transistorin an array area of a semiconductor memory device, the methodcomprising: forming a transistor gate oxide layer in the periphery andarray areas; depositing a floating gate poly-silicon layer in theperiphery and array areas above the gate oxide; etching openings in thefloating gate poly-silicon layer in both the periphery and array areas;forming a dielectric layer comprising an oxide over the etched floatinggate poly-silicon layer and in the openings in the periphery and arrayareas, wherein the dielectric layer contributes to a re-oxidation of aportion of the gate dielectric under the floating gate poly-silicon;depositing a control gate poly-silicon layer in the periphery and arrayareas above the dielectric layer; making electrical contact to thecontrol gate poly-silicon layer in the array area; and making electricalcontact to the floating gate poly-silicon in the periphery area.
 25. Themethod of claim 24 further comprising forming trench isolation regionsin the periphery and array areas prior to etching openings in thefloating gate poly-silicon layer.
 26. The method of claim 25 wherein thetrench isolation regions are formed using a self-aligned process.
 27. Anin-process semiconductor field effect transistor comprising: source anddrain regions formed in a semiconductor substrate active area, whereinthe source and drain are laterally separated by a channel region; atransistor gate vertically located over the channel region and separatedtherefrom by a gate oxide, wherein the transistor gate has at least onelateral edge; the gate oxide includes a bird's beak formation near theat least one lateral edge of the transistor gate; a layer of oxidelocated above and in contact with the transistor gate, such that a sizeof the bird's beak formation is controllable; and a poly-siliconstructure located above and in electrical contact with the transistorgate.
 28. The in-process semiconductor field effect transistor of claim27 wherein the lateral edge of the transistor gate is laterally spacedfrom an edge of the active area at the gate oxide by a distance X, wheredistance X is selected to control the size of the bird's beak formation.29. An in-process semiconductor device comprising field effecttransistors (FET) in a periphery area and floating gate transistors inan array area, the semiconductor device comprising: a transistor gateoxide layer located in the periphery and array areas; a floating gatepoly-silicon layer located in the periphery and array areas above thegate oxide; vertical openings in the floating gate poly-silicon layer inboth the periphery and array areas; a dielectric layer comprising anoxide located over the etched floating gate poly-silicon layer and inthe openings in the periphery and array areas, a plurality of bird'sbeak formations in the gate oxide layer in both the periphery and arrayareas, such that a size of the bird's beak formations are controllableby locations of the vertical openings; a control gate poly-silicon layerin the periphery and array areas above the dielectric layer; anelectrical contact to the control gate poly-silicon layer in the arrayarea; and an electrical contact to the floating gate poly-silicon in theperiphery area.
 30. An in-process semiconductor device comprising fieldeffect transistors (FET) in a periphery area and floating gatetransistors in an array area, the semiconductor device comprising: atransistor gate oxide layer located in the periphery and array areas; afloating gate poly-silicon layer located in the periphery and arrayareas above the gate oxide; vertical openings in the floating gatepoly-silicon layer in both the periphery and array areas; a dielectriclayer comprising an oxide located over the etched floating gatepoly-silicon layer and in the openings in the periphery and array areas,a plurality of bird's beak formations in the gate oxide layer in boththe periphery and array areas, such that a size of the bird's beakformations are controllable by locations of the vertical openings; acontrol gate poly-silicon layer in the periphery and array areas abovethe dielectric layer; an electrical contact to the control gatepoly-silicon layer in the array area corresponding to a floating gatememory cell; an electrical contact to the floating gate poly-siliconlayer in the array area corresponding to a select transistor; and anelectrical contact to the floating gate poly-silicon in the peripheryarea.